| PART |
Description |
Maker |
| XTSC1812-3.3NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0201-10NF-30V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT |
Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 |
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 300 V, SILICON, RECTIFIER DIODE
VGA VIDEO CABLE 100 FT MM 25 A, 100 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 600 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 400 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
Diotec Elektronische
|
| TG1.8.682J TM1.4.332JNBSP TM1.4.332J RTH22ES682J T |
Positive - Temperature - Coefficient Silicon Thermistors
From old datasheet system
SENSISTORS SILICON THERMISTORS
Multiconductor UTP Data Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4 RoHS Compliant: Yes 硅热敏电
POSITIVE TEMPERATURE COEFFICIENT SILICON THERMISTORS 硅正温度系数热敏电阻
|
List of Unclassifed Manufacturers
MICROSEMI[Microsemi Corporation]
ETC[ETC]
Electronic Theatre Controls, Inc.
Microsemi, Corp.
|
| BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop
|
Infineon
|
| KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 |
Silicon temperature sensors(纭??绱?俯搴?????)
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| Q62901-B80 KTY19- KTY19-6M KTY19-6Z Q62705-K271 Q6 |
Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing SPECIALTY ANALOG CIRCUIT
UCC289x Current Mode Active Clamp PWM Controller 16-SOIC -40 to 85
-Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
